This report studies the IGBT modules and Silicon Carbide (SiC) Modules for EV (Electric Vehicle), used in Main Inverter (Electric Traction), OBC and DC-DC.

An IGBT Power Module is a power semiconductor component used in power electronic devices in several industries as they have high-power efficiency, high blocking voltage, and ability to work in low power. An IGBT Power Module is formed by arranging several IGBTs in parallel in a single casing. Silicon carbide as a semiconductor has a wide band-gap, used in MOSFET it has very low switching losses and therefore allows higher switching frequencies compared to regular silicon devices. At the same time, it can be operated at higher temperatures and at higher voltages compared to traditional Si semiconductors. The use of SiC power semiconductors is expected to grow exponentially due to its crucial efficiency characteristics that enables cost reductions while at the same time improving system performance in a variety of applications such as EV chargers, solar inverters, e-mobility, and motor drives.

The global IGBT and SiC Module for Automotive market size is projected to grow from US$ 4470 million in 2024 to US$ 13360 million in 2030; it is expected to grow at a CAGR of 20.0% from 2024 to 2030.

ReportPrime, Inc. (LPI) ' newest research report, the “IGBT and SiC Module for Automotive Industry Forecast” looks at past sales and reviews total world IGBT and SiC Module for Automotive sales in 2023, providing a comprehensive analysis by region and market sector of projected IGBT and SiC Module for Automotive sales for 2024 through 2030. With IGBT and SiC Module for Automotive sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world IGBT and SiC Module for Automotive industry.

This Insight Report provides a comprehensive analysis of the global IGBT and SiC Module for Automotive landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on IGBT and SiC Module for Automotive portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global IGBT and SiC Module for Automotive market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for IGBT and SiC Module for Automotive and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity.

With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global IGBT and SiC Module for Automotive.

The key players of IGBT and SiC Module for Automotive include:

• Infineon
• STMicroelectronics
• Fuji Electric
• Mitsubishi Electric
• Semikron Danfoss
• BYD
• Bosch
• onsemi
• Zhuzhou CRRC Times Electric
• StarPower Semiconductor
• Wolfspeed
• MacMic Science & Technology
• Hangzhou Silan Microelectronics
• Hitachi Power Semiconductor Device
• United Nova Technology
• Rohm
• Microchip (Microsemi)
• Guangdong AccoPower Semiconductor
• Grecon Semiconductor (Shanghai)

Key Questions Addressed in this Report

1. What is the 10-year outlook for the global IGBT and SiC Module for Automotive market?
2. What factors are driving IGBT and SiC Module for Automotive market growth, globally and by region?
3. Which technologies are poised for the fastest growth by market and region?
4. How do IGBT and SiC Module for Automotive market opportunities vary by end market size?
5. How does IGBT and SiC Module for Automotive break out by Type, by Application?